Heteroepitaxy of InP/GaAs by MOCVD

InP is grown on GaAs substrate by metalorganic chemical vapor deposition(MOCVD).The InP low temperature buffer layer is firstly deposited on the substrate followed by the InP epitaxial layer.It is found that the buffer layer’s grown at 450"C with 15nm thickness could obtain high quality InP epitaxial layer.Furthermore，with increasing the epitaxial layer's thickness，the sample's crystalline quality is enhanced.Finally，the double crystal X·ray diffraction (DCXRD) measurement with off20 scan shows that the annealed sample can obtain the full width at half maximum (FWHM)of 238.5".