Microstructure-related piezoelectric properties of a ZnO film grown on a Si substrate

Abstract We investigated the effect of grain size on the piezoelectric properties of ZnO using films of different grain sizes and a fixed thickness of 800 nm deposited on a Si substrate by pulsed laser ablation in the temperature range of 300–700 °C. All of the deposited films have a crystal structure with a c-axis orientation. The grain size of the grown films, characterized by transmission electron microscopy (TEM), increases with the deposition temperature. In contrast, their piezoelectric efficiency (PE, d 33 ), characterized by piezoelectric force microscopy (PFM), was found to initially increase with the deposition temperature up to 500 °C, after which it decreased with further increases in temperature. The maximum PE value is observed for the film deposited at 500 °C with a grain size of approximately 60 nm. The peculiar PE behavior observed was theoretically explained by a competition between the contribution of the c-axis orientation favoring a larger d 33 value due to the enhanced static asymmetry and the strong grain size effect that influences the piezoelectric polarization as a result of domain motion.