CoSi2 formation by high current ion implantation with a metal vapor vacuum arc ion source

Abstract Crystalline CoSi 2 (1 0 0) buried layers with low sheet resistivity were synthesized by direct ion implantation into Si(1 0 0) substrates at a low temperature of 400 °C using a metal vapor vacuum arc ion source. X-ray diffraction patterns showed that these layers had a strong (1 0 0) preferred orientation. Rutherford backscattering spectrometry and four-point probe measurement showed that a high implantation dose is beneficial to forming good electrical properties.