Crystalline Structure of SiC Thin Films Grown by MOCVD Method with Tetraethylsilane

It was proved that the crystalline SiC thin films were grown on silicon substrates by thermal CVD process using the liquid source, tetraethylsilane. The film was investigated by XRD and TEM methods. It was clarified that the film consisted of polycrystalline 3C-SiC and included stacking faults.