Photoluminescence of Mn+ doped GaAs
2010
Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of
materials. In this work, the room-temperature and low temperature photoluminescence of Mn-doped GaAs were investigated,
respectively. Mn-doped GaAs structure materials were prepared by Mn + ion implantation at room temperature into GaAs. The
implanted samples were subsequently annealed at various temperatures under N 2 atmosphere to recrystallize the samples and remove
implant damage. A strong peak was found for the sample annealed at 950 °C for 5 s. Transitions near 0.989 eV (1254 nm), 1.155 eV
(1074 nm) and 1.329 eV (933 nm) were identified and formation of these emissions was analyzed for all prepared samples. This
structure material could have myriad applications, including information storage, magnet-optical properties and energy level
engineering.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI