Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector

Abstract The resonant excitation of sub-bands in the self-consistent potential well formed by a δ-layer of antimony in silicon has been measured. The density-tuneable resonance of a single δ-layer has an absorption strength of the order of 50%. The expected splitting of the quantum states into two different sub-band ladders, caused by the multi-valley property of silicon, is obtained. Good agreement with self-consistent calculations can be obtained if an additional background of deep levels near the δ-layer is assumed. An IR detector concept is discussed.