Numerical Analysis of 3-Dimensional Scaling Rules on a 1.2-kV Trench Clustered IGBT
2018
3-dimensional scaling rules for the cathode cells and
threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT)
are investigated using calibrated models in Synopsys Sentaurus
TCAD tools. Scaling down results in an enhancement of current
gain of the inherent thyristor action which reduces the forward
voltage drop even more than that of a scaled Trench IGBT
(TIGBT). For identical switching losses, at a scaling factor k=3,
the forward voltage drop is reduced by 20% at 300K and 30% at
400K when compared to the conventional TCIGBT (k=1). Most
importantly, despite its lower conduction losses than an
equivalent TIGBT, a scaled TCIGBT structure can maintain its
short circuit capability, due to the additional scaling principle
applied to the n-well and p-well regions, maintaining the
self-clamping feature. Thus, TCIGBT is a more efficient
chip-for-chip, reliable replacement of a TIGBT for energy savings
in applications.
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