Method for forming a metal feature of dielectric layer

PROBLEM TO BE SOLVED: To obtain a highly accurate method for metallization by forming a dielectric layer and a titanium nitride layer on a substrate and patterning both layers before titanium nitride and a metal adhere thereto. SOLUTION: A semiconductor, typical in the processing stage, is provided on a substrate 20 and a dielectric layer 32 is formed thereon before planalization takes place. It is then coated with antireflection titanium nitride 34 and both layers 32, 34 are patterned to make an opening. Subsequently, a second titanium nitride layer 44 are formed on the titanium nitride layer 34 and the via or channel. The trench is then filled up and a metal layer 46 of W, for example, is formed while extending onto the titanium nitride layer 44. Consequently, a highly accurate method for metallization is obtained as well as an antireflection film coated directly with a metal and adhesion of metal and dielectric is improved in the dielectric layer. COPYRIGHT: (C)1996,JPO