Varying the charge carrier mobility in semi-conductor components to achieve overall design goals

The semiconductor device (100) comprising: a substrate (110); an insulating layer (120) formed on the substrate (110); a first member (710) which is formed on the insulating layer (120), comprising: a first web (120) which is formed on the insulating layer (120) and having a first fin aspect ratio; a second member (720) which is formed on the insulating layer (120) and comprising: a second web (130) which is formed on the insulating layer (120) and a second fin aspect ratio different from the first fin aspect ratio.