Controlling Lateral Ordering of InGaAs Quantum Dots with Arsenic Background

We present in this work a method to control lateral ordering of In0.4Ga0.6As quantum dots (QDs) using the surface anisotropic and the growth environment. We have shown experimentally that using As2 molecules instead of As4 as a background flux is promising to control the diffusion of adatoms in away to make it possible to control the ordering of In0.4Ga0.6As QDs together with the GaAs surface properties specially for GaAs (100) surfaces. For GaAs (n11)B surfaces the As4 provides a better two dimension ordering than the As2 environment. Our results are consistent with reported experimental and theoretical studies on surface structure and diffusion mechanism over GaAs surface.