A modified metalorganic chemical vapor deposition chemistry for improved selective area regrowth

Abstract Addition of HCl generated by pyrolysis of 1,1,1 trichloroethane (TCA) during both low pressure and atmospheric pressure MOCVD (metalorganic chemical vapor deposition) of InP has been used to improve the performance of the MOCVD selective area regrowth process. The addition of TCA provides good planar growth on unmasked areas without polycrystalline deposition on the mask or growth over the mask edges. Growth protrusions in the (111) direction for conventional MOCVD regrowth around re-entrant mesas are eliminated when TCA is added. TCA does not effect dopant incorporation or the ability to grow semi-insulating InP:Fe, but does cause a reduction in the growth rate proportional to the TCA partial pressure. Planarization of etched features without masks is also improved. Improved morphology is shown by demonstrating reproducible selective area InP regrowth around SiO 2 capped etched mesas of various shapes, including reactive ion etched (RIE) mesas.