Temperature hysteresis of the capacitance dependence C(T) for ferroelectric ceramics

The influence of applied electric field, temperature variation rate, and free charge carrier density on the hysteresis of C(T) dependence is investigated on ferroelectric ceramic capacitors. The measurements were performed on the ceramic capacitors of Ba0.55Sr0.45TiO3 containing 12 wt % of Mg complex additive and the 0.87Pb(Mg1/3Nb2/3)O3–0.13PbTiO3 ceramics. The investigations were directed to study of electrocaloric response of ferroelectric ceramics. Various mechanisms of temperature hysteresis are discussed.