Study of Surface and Electrical Conductivity of Thin Metal Films of the Ni–Al System

The results of studies of thin Ni–Al films obtained by the resistive thermal evaporation method and having characteristic island sizes of 700–1000 nm with a film thickness of ~500 nm are described. A brief description of the method for producing a film using an installation for creating a high vacuum and subsequent film deposition is presented. The obtained film sample was studied with an optical microscope, a scanning probe microscope, and a Fourier analyzer. The kinetic characteristics of the film, its film, and the characteristic sizes of the islands have been established; regularities in the island structure of the films were sought, and its electrical conductivity has been determined.