Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis

Tunnel-injection lasers promise advantages in the modulation bandwidth and temperature stability in comparison with conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison with a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at an telecom wavelength of 155 μm, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers.