Modeling and Simulation of DG SOI N FinFET 10 nm using Hafnium Oxide

This paper explores the modeling and simulation of DG SOI (Semiconductor On Insulator) N FinFET 10 nm with Hafnium Oxide by using SILVACO TCAD Atlas Software. The major critical parameters like I ON , I OFF are evaluated in order to estimate the performance of the device. The Berkeley PTM (Predictive Technology Model) parameters for 10 nm nodes are used.