Patterning performance with main chain scission type photoresist for EUV lithography

Zeon developed ZER02#04 resists with main chain scission reaction to enhance patterning performance for EUVL. This presentation focuses on the patterning performance of contact hole patterns with ZER02#04DM at ADI and AEI. For example, at P40nm orthogonal C/H in ADI, the resolution at 17.5 nm in hole CD was achieved at the exposure dose of 76 mJ/cm2, giving a LCDU of 2.77 nm. And it could transfer P40nm orthogonal C/H patterns to SiO2 by etching. The LCDU in AEI was enhanced at 2.47 nm. Additionally, the results with novel resist for next generation plan to be introduced at my presentation.