Solution processed WO3 layer for the replacement of PEDOT:PSS layer in organic photovoltaic cells

Abstract Tungsten oxide layer is formed uniformly by a sol–gel technique on top of indium tin oxide as a neutral and photo-stable hole extraction layer (HEL). The solution processed tungsten oxide layer (sWO 3 ) is fully characterized by UV–Vis, XPS, UPS, XRD, AFM, and TEM. Optical transmission of ITO/sWO 3 substrates is nearly identical to ITOs. In addition, the sWO 3 layer induces nearly ohmic contact to P3HT as PEDOT:PSS layer does, which is determined by UPS measurement. In case that an optimized thickness (∼10 nm) of the sWO 3 layer is incorporated in the organic photovoltaic devices (OPVs) with a structure of ITO/sWO 3 /P3HT:PCBM/Al, the power conversion efficiency (PCE) is 3.4%, comparable to that of devices utilizing PEDOT:PSS as HEL. Furthermore, the stability of OPV utilizing sWO 3 is significantly enhanced due to the air- and photo-stability of the sWO 3 layer itself. PCEs are decreased to 40% and 0% of initial values, when PEDOT:PSS layers are exposed to air and light for 192 h, respectively. In contrast, PCEs are maintained to 90% and 87% of initial PCEs respectively, when sWO 3 layers are exposed to the same conditions. Conclusively, we find that solution processed tungsten oxide layers can be prepared easily, act as an efficient hole extraction layer, and afford a much higher stability than PEDOT:PSS layers.