Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy

In this work, Si 1-y C y and Si 1-x-y Ge x C y alloy layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution an substitutional incorporation, strain formation and relaxation, SiC precipitation, were demonstrated to depend strongly both on ion implantation and laser processing conditions. The growing of pseudomorphic epitaxial layers, from group IV semiconductor alloys, using the very high energy and large area beam (up to 1 J/cm 2 per pulse over 40 cm 2 ) excimer laser developed by SOPRA, for mass production is reported for the first time.