P‐15: Bias Stress Reliability for w/ and w/o Oxide‐passivated IGZO TFTs

The behaviors of dynamic gate bias stress for Indium-Gallium-Zinc-Oxide (IGZO) TFTs were investigated in this study. The device after storage represents a parasitic traneffect after positive gate bias stress. Furthermore, the stability of IGZO TFTs can be improved by adding passivation layer.