Polarization-reinforced p-i-n junction InGaN solar cell

The present invention discloses a polarization enhancement InGaN pin junction solar cell, a structure is bottom to top: a substrate, GaN layer, the whole strain relaxation high In composition InyGa1-yN layer, InGaN superlattice layer, high in composition layer n-InyGa1-yN, high in composition i-InxGa1-xN layer, a high in composition layer p-InyGa1-yN, p-GaN cladding layer; a high in composition n-InyGa1-yN layer lead negative electrode, a positive electrode lead on the p-GaN cladding layer. InGaN pin junction solar cell structure of the present invention is grown directly on the relaxed strained InGaN layer and the whole superlattice layer InGaN, InGaN layer and the whole strain relaxation InGaN superlattice layer InGaN does not produce a pin junction solar cell layer mismatch stress, and can improve the quality of InGaN pin junction cell conversion efficiency of solar cell material; n-InGaN layer with additional p-InGaN layer having a higher in composition lower the i-InGaN layer sandwiched in composition , character mismatch introduces tensile strain in i-InGaN layer may further improve the conversion efficiency of a pin junction solar cell InGaN.