Reduction of on‐resistance in ion‐implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Si ion-implanted GaN/AlGaN/GaN HEMTs with extremely low gate leakage current and low source resistance prepared without any recess etching process are demonstrated. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on a sapphire substrate. After ion implantation into source/drain regions at an energy of 80 keV, the performance was significantly improved. The on-resistance was reduced from 26.2 to 4.3 Ω-mm. The saturation drain current and maximum trans-conductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm. © 2010 Wiley Periodicals, Inc. Electron Comm Jpn, 93(6): 19–24, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecj.10213