Connecting storage grid storing unit, operation and manufacturing method thereof

The disclosure provides a connecting storage grid storing unit, operation and manufacturing method thereof. The storing unit of an embodiment comprises a storing transistor which further comprises a gate stack forming on a substrate. The gate stack comprises a storing gate medium, a storing gate electrode, a control gate medium and a control gate electrode which are sequentially piled up. The storing unit also comprises an auxiliary transistor which comprises a gate stack forming on the substrate and source/ drain regions positioned on the two sides of the gate stack. A storing electrode of the storing transistor is connected to one of the source/ drain regions of the auxiliary transistor.