EFFECTS OF P / N IN HOMOGENEITY ON CDZNTE RADIATION DETECTORS.

Spectrometer grade, room-temperature radiation detectors have been produced on Cd{sub 0.90}Zn{sub 0.10}Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd{sub 0.90}Zn{sub 0.10}Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution of {sup 57}Co and {sup 241}Am radiation peaks are observed on all detectors except the ones produced on Cd{sub 0.90}Zn{sub 0.10}Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.