Quantum well luminescence due to minority photoelectrons in p-type resonant tunnelling structures

Photoluminescence spectroscopy is used to investigate p-type double-barrier resonant tunnelling structures based on GaAs/AlAs. Strong photoluminescence from the quantum well is observed due to recombination of resonantly tunnelling holes with minority photogenerated electrons, which also tunnel into the quantum well. The luminescence undergoes a red shift with increasing bias and its intensity shows peaks at biases corresponding to the first four hole resonances in the current-voltage characteristics. Two additional strong peaks are also seen in this intensity-bias plot, due to electron resonant tunnelling.