A P-Band High Gain RF Amplifier based on SiGe HBT Technology

A P-Band high gain radio frequency (RF) amplifier is presented in this paper. It is fabricated in a 0.35 μm silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Theory, simulation and measurement are shown. It is designed as a two-stage cascade amplifier. The input and output matching networks are designed on the chip. It achieves high power gain of 29.5 dB at 500 MHz, wide bandwidth of 1 GHz, low noise figure of 1.1 dB at 500 MHz, and high output 1 dB compression point of 11 dBm at 500 MHz. It is designed for narrow or wide bandwidth industrial and military applications that require high gain and low noise IF or RF amplification. It can also be easily integrated into a RF system-on-a-chip (SOC).