The dependence of GaN HEMT's frequency figure of merit on temperature

This study presents extensive thermal characterization of GaN/SiC devices from five US sources across temperature (−25°C to +125°C). The changes with temperature for: cutoff frequency (ƒ t ), maximum oscillation frequency (ƒ max ), saturated current (I dss ), transconductance (g m ) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for ƒ t , ƒ max , I dss , and g m in GaN technology. The results obtained provide MMIC designers with key information required for meeting temperature specifications.