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Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications
Fabrication and nonlinear load-pull characterization of GaN HEMT on SiC for High power applications
2004
Teppati
Camarchia
S. Donati Guerrieri
Marco Pirola
Giovanni Ghione
Marco Peroni
P. Romanini
Claudio Lanzieri
S. Lavanga
Antonio Serino
Luigi Mariucci
Keywords:
Materials science
Optoelectronics
Load pull
Fabrication
Nonlinear system
High-electron-mobility transistor
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