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Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates
Role of oxygen vacancy in HfO2 and Al2O3 dielectrics on effective workfunction shifts using HfxRu1-x gates
2007
Y.Nunoshige Y.Nunoshige
Toshihide Nabatame
H.Ohta H.Ohta
Akira Toriumi
Tomoji Ohishi
Tomoji Oishi
Keywords:
Oxygen
Nanotechnology
Dielectric
Vacancy defect
Molecular physics
Materials science
oxygen vacancy
Correction
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