Wafer Curvature in Molecular Beam Epitaxy Grown Heterostructures.

Wafer curvature in strained molecular beam epitaxy grown heterostructures has been studied. Theories on semiconductor wafer curvature have been re-examined and errors that have persisted in the literature have been corrected. This paper presents an approach to calculating the wafer curvature for an arbitrary multilayer system using basic physical equations. X-ray diffraction measurements have been performed to measure the radius of curvature of several samples and the results are in good agreement with the theory presented here.