High-K Ta20S Film for Resistive Switching MemoryApplication

We report a novel nonvolatile resistive switching memory with a Cu/Ta20s/TiN structure. This memory device has low power (100 J.1A11.5 V), large threshold voltage of 0.8~ moderate endurance of 10 2 cycles, and excellent retention with high resistance ratio of 2.4xl0 2 after lOS s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta20S solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.