A Novel High Performance 6500V IGBT with P-type Schottky Contact

A novel high performance 6500V planar gate insulated gate bipolar transistor (IGBT) with p-type schottky contact (PSC-IGBT) is proposed in this paper. The proposed PSC-IGBT features a p-type schottky contact between the p-base and emitter metal. The p-type schottky contact improves the quasi-fermi potential of the p-base region and forms a hole barrier between the p-base and emitter electrode. Therefore, enhanced conductance modulation is obtained in the n- drift region, which improves the device performance significantly. The simulation results show that without degradation of the breakdown voltage (BV), the forward on-state voltage drop (Vceon) at the collector current density of 50A/cm2 is reduced from 3.72V of the conventional planar gate IGBT (Con-IGBT) to 3.40V of the proposed PSC-IGBT. Meanwhile, at the same Vceon of 3.25V, the turn-off loss (Eoff) decreases from 163.12mJ/cm2 of the Con-IGBT to 125.73mJ/cm2 of the proposed PSC-IGBT. Compared to the Con-IGBT, the Eoff of the proposed PSC-IGBT is reduced by 22.9%. The proposed PSC-IGBT not only improves the forward conduction characteristics of the device but also improves the trade-off relationship between the Vceon and Eoff.