Effects of electrical stress and ionizing radiation on Si-based TFETs
2015
The effects of electrical stress and ionizing radiation on the characteristics of Si-based TFETs were investigated experimentally. We found that the electrical stress effects in TFETs could not be ignored in radiation tests, since they can possibly overwhelm the radiation-induced degradation. Under this circumstance, a lower gate voltage under which the electrical stress effects were suppressed induced a stronger radiation-induced degradation in threshold voltage shift and interface traps accumulation.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
2
Citations
NaN
KQI