Síntesis y caracterización del material ternario Ag2SnSe3 dopado con galio

In this work we report the synthesis and characterization of the ternary material Ag 2 SnSe 3 doped with Gallium (Ga). The samples were synthesized by direct melting of their elements in stoichimetric 2:1:3 doped with 100, 1000 and 10000 ppm of Ga. The chemical analysis (EDX) allowed us to establish the stoichiometric relationships. The differential thermal analysis (DTA) indicates the existence of a main phase around 503°C associated to the melting point of the materials and a peak around 101°C, still without interpretation. The X-ray diffraction analysis indicates that the material Ag 2 SnSe 3 crystallizes with main phase in the monoclinic system with space group Cc, and unit cell parameters: a = 7.18 A, b = 10.55 A, c = 6.70 A, β = 111.98°C, and second phases, being identified until the moment SnSe 2 .