Photoluminescence spectroscopy of SIMOX

Photoluminescence spectroscopy (PL) and SIMS technique are employed to determine crystal perfection of the top Si layer and the effects of residual oxygen in the top Si layer of oxygen implanted (SIMOX) wafer. From the PL experimental results, we draw the conclusion that the intrinsic peak (a peak, at 0 eV), amplitude of the PL, and the amplitude ratio of b peak (at 0.33 eV) to a peak (b/a) provide an estimation of crystal perfection of the top Si layer of SIMOX wafer. The luminescence peak, b, is assumed to originate from implantation of oxygen ions and high temperature annealing process of SIMOX wafer and it is similar to the phosphorus donor level. The luminescence peak at 0.06 eV in the PL is due to a shallow donor level and the peak at 0.16 eV also acts as a donor level. These donor levels play an important role in making n-type top Si layer from p-type substrate.