Design of a Uni-Traveling-Carrier (UTC) photodetector in InP Membrane on Silicon (IMOS)

InP Membrane on Silicon (IMOS) technology provides a new platform for integrating a full set of photonic components on top of CMOS chips. In this paper, a design of a uni-traveling-carrier photodetector in this platform is presented. Optical simulations have been performed to determine both the coupling loss and the metal loss. Electrical simulations have also been performed to optimize the RC constant and the transit time. The simulation shows that a bandwidth beyond 100 GHz with a responsivity of 0.8 A/W can be achieved. This provides promising integrated solutions for ultrafast optical interconnects and microwave applications.