Further localizations studies of Co atoms diffused into silicon

Abstract 57 Co atoms diffused at 1270 K for 1 h into single crystals of Si have a single Mossbauer line at (−0.059±0.001) mm/s. Channelling studies show that 77% of the Co atoms occupy some substitutional sites. It is found that Co forms epitaxial CoSi 2 clusters in the Si lattice.