Silicon epitaxial growth on GaAs using a rapid thermal chemical vapor deposition process

Epitaxial silicon layers are grown on GaAs substrates in a light‐assisted cold wall horizontal reactor. High quality silicon is obtained at the surface when the growth is conducted in a two‐step sequence. The first step is a silane exposure at 700 °C where epitaxial silicon starts to grow and where tensile stress relaxes to form a highly defective layer. The second step is an epitaxial growth of silicon at 800 °C. The crystalline perfection and stress in both the layer and the substrate are characterized by Raman scattering. Cross‐section transmission electron microscopy analysis shows mainly the formation of stacking faults at the interface. Their number reduces as the Si film thickness increases. The rapid thermal chemical vapor deposition does not require arsenic overpressure to protect the GaAs substrate from thermal degradation during epitaxial growth.