Simulation of electro-optic modulator based on optical waveguide formed by residual thermal stress-induced on Bi4Ge3O12 substrate by Si3N4 thin film

This paper presents a study on the performance of electro-optic (EO) modulators consisting of optical waveguides induced by residual thermal stress produced by silicon nitride (Si 3 N 4 ) film deposited on bismuth germanate (Bi 4 Ge 3 O 12 ) substrate. Methodologies developed in previous works are used to analyze the performance related to electro-optics modulators. The analyses were performed by a full vector finite element method (FEM) based program, capable of multiphysics simulations, including evaluation of optical propagation characteristics of residual thermal stress-induced waveguides and main electro-optic parameters of EO modulators, considering different geometrical designs. The presented performance results (in terms of sizes of modes, effective refractive indices, characteristic impedances and electro-optic modulation depth) indicate the viability of EO modulators fabrication on cubic substrates with unusual directions of light propagation and electric field application.