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Planar Bonded Double Gate MOS Transistors Down to Lg = 10nm
Planar Bonded Double Gate MOS Transistors Down to Lg = 10nm
2006
Maud Vinet
Thierry Poiroux
J. Widiez
Keywords:
Metal gate
Transistor
Planar
Electronic engineering
Materials science
Optoelectronics
double gate
Correction
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