A flash EEPROM cell scaling including tunnel oxide limitations

Kuniyoshi Yoshikawa,S. Mori,Eiji Sakagami,N. Arai,Y. Kaneko,Yoichi Ohshima

A flash EEPROM cell scaling including tunnel oxide limitations

1990

Kuniyoshi Yoshikawa
S. Mori
Eiji Sakagami
N. Arai
Y. Kaneko
Yoichi Ohshima

A new flash EEPROM cell scaling scenario is proposed, which takes tunnel oxide thinning limitation into consideration. The derived scaling scenario, performance, and reliability are discussed, in comparison with EPROM scaling.

Keywords:

Leakage (electronics)
Oxide
Materials science
Electronic engineering
EEPROM
EPROM
Scaling
International Electron Devices Meeting
Semiconductor device
Logic gate
Voltage

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