Design, fabrication and evaluation of tunnel transit-time diodes for V-band and W-band power generation

The authors have successfully designed and tested GaAs p/sup +/n/sup +/n/sup -/n/sup +/ single-drift tunnel injection transit-time (TUNNETT) diodes for V-band and W-band operation. The basic structure and electric field profile of the device are shown. Both designs operated within the range of frequencies expected. The V-band devices produced 26 mW at 58 GHz with 1.4% efficiency. The W-band devices produced 33 mW at 93.5 GHz with 2.65% efficiency. The oscillations had a clean spectrum. The devices were fabricated from molecular beam epitaxy (MBE)-grown material. >