Phase change memory cell and method for forming

The embodiment of the invention provides a phase change storage unit. The phase change storage unit comprises a diode, at least four discrete bottom electrodes electrically connected with the diode, and phase change units electrically connected with the bottom electrodes in a one-to-one corresponding way. The phase change storage unit provided by the embodiment of the invention contains a large diode in a space which is used for containing a plurality of diodes in the prior art, wherein the big diode corresponds to a plurality of phase change units. As the cross sectional area of the big diode is enlarged, high driving current can be provided, and the driving capability of the diode is enhanced so as to meet the needs of the storage function, and the forming process of the phase change storage unit provided by the embodiment of the invention is simple.