0-Level Encapsulation Using Thin Films Deposition for RF MEMS - Demonstration on RF MEMS Switch Structures

In this paper we report a method for 0-level encapsulation using thin films deposition at temperatures below 200°C. The packaging method allows the use of photoresist as sacrificial layer, which facilitates sacrificial layer removal, being compatible with micromachining and CMOS integration This package was tested on an RF MEMS switch structure for K to W frequency bands (20-110GHz) and shows a very small influence over S parameters for all frequency range.