GaN-based super-lattice Schottky barrier diode with low forward voltage of 0.81V

Abstract In this paper, we report a high-performance AlGaN/GaN Schottky barrier diode (SBD) based on super-lattice structure. The stacking of five AlGaN/GaN heterostructures yields a small sheet resistance (RSH) of 120 Ω/sq. The fully recessed anode structure is used to contact all the current channels, leading to a small turn-on voltage (VON) of 0.44 V. Besides, the ohmic contact with a contact resistance (RC) of 0.17 Ω mm is obtained by etching the cathode region. The on-resistance (RON) of the device is reduced by 63.8%, down to 1.7 Ω mm, and a forward voltage (VF) as low as 0.81 V is achieved. To the best of our knowledge, this VF is the lowest value among all the GaN SBDs. These results are superior to the conventional single heterojunction devices, showing the great potential of the GaN-based super-lattice structures for achieving low forward conduction losses.