PHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS

The photoluminescence of Be-doped GaAs quantum wells with width of 10 nm was measured at 4.2 K. The doping concentration is about 1×10 17 and 5×10 18 cm -3 . The results showed that the product of the density of states of acceptors and the probability of transition from conduction subband n=l to neutral acceptors at the well center is larger than that near the interface of GaAs and AlGaAs. In addition, the ionization energy of acceptors is decreased as doping concentration is increased. It is due to band-gap narrowing with the doping concentration of p-type GaAs.