Processing and Switching Behavior of Multiferroic (Bi0.7Dy0.3FeO3) Microstructure Arrays

Multiferroic systems, which exhibit coexistence of both ferroelectric and ferromagnetic ordering at room temperature, are of great importance for a variety of device applications. Due to coupling between the two order parameters, it is possible to bring polarization in the multiferroic systems by either means (applying electric or magnetic field). We have been successful in developing material (Bi0.7Dy0.3FeO3) which exhibits the multiferroic behavior at room temperature with significant coupling in bulk as well as thin films. We therefore propose to develop a procedure to fabricate multiple memory devices using this new compound.