Very low temperature growth of polycrystalline silicon using SiF4H2

Abstract We have studied the growth of polycrystalline silicon by remote plasma chemical vapor deposition using a SiF 4 H 2 mixture at a low temperature of 100°C. Thin film is composed of grains in which there are many small sub-grains of less than 10nm. The film exhibited the polycrystalline volume fraction of 84.4%, the optical band gap of 2.57eV and efficient visible photoluminescence centered at 2.1eV at room temperature. The photoluminescence appears to be arised by the quantum confinement effect in nano-size crystallites surrounded by F and H atoms.