Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer

InGaN/GaN multiple-quantum-well (MQW) structure with Si-doped InGaN electron-emitting layer (EEL) was grown by metal–organic chemical vapor deposition and their characteristics were evaluated by photoluminescence (PL) measurements. In a typical structure, a low indium composition and wide potential well was used to be an EEL, and a six-fold MQW was used to be an active layer where the injected carriers recombine. By comparing the PL spectral characteristics of the MQW samples, the PL intensity of MQW with EEL is about 10 times higher than that of typical MQW. Experimental results indicate that the high electron capture rate of the MQW active region can be achieved by employing EEL.