Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing

We have grown single-crystalline In2O3 films on yttria-stabilized zirconia (001) and (111) substrates by reactive electron beam evaporation, and investigated the effects of ex situ postgrowth annealing in oxygen atmosphere on the surface morphology and electrical transport properties. For the (111)-oriented film, we observed a flat surface in atomic scale as well as high Hall mobility up to 130 cm2 V−1 s−1 with carrier density of 2.3 × 1019 cm−3 at room temperature. The results indicate that the postgrowth annealing is effective in fabricating high-quality In2O3 film.