Record mobility (μ eff ∼3100 cm 2 /V-s) and reliability performance (V ov ∼0.5V for 10yr operation) of In 0.53 Ga 0.47 As MOS devices using improved surface preparation and a novel interfacial layer

In 0.53 Ga 0.47 As quantum-well (QW) MOSFETs with a novel interfacial layer(IL)/high-k stack on an improved interface were fabricated. Excellent device characteristics (SS∼72mV/dec, I on /I off >10 6 at V ds =0.5V, DIBL∼26mV/v for a device at EOT∼1.25nm) were obtained. In addition, EOT was scaled down to 1.0 nm without a significant degradation in electrical properties. The extracted field-effect mobility (peak μ eff ∼3100 cm 2 /V-s for EOT∼1.25nm and μ eff ∼ 2400 cm 2 /V-s for EOT∼1.0nm) is the highest split C-V mobility reported for surface channel In 0.53 Ga 0.47 As MOSFETs at such small EOT. We demonstrate a record reliability performance using the new IL with an overdrive voltage, V ov ∼0.5V for a 10 year operation (with maximum ΔV th =30mV) at EOT∼1.25nm. We attribute this performance enhancement in mobility to reduced surface roughness (extremely smooth surface) and remote phonon scattering (due to IL), and improvement in reliability to enhanced energy misalignment between defect bands in high-k and charge carriers in the semi-conductor respectively.